J.-L Farvacque: search on Z-Library

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1

Testing health care professionals' communication skills: the usefulness of highly emotional standardized role-playing sessions with simulators

Darius Razavi, Nicole Delvaux, Serge Marchal, Michel De Cock, Christine Farvacques, Jean-Louis Slachmuylder

Journal:

Psycho-Oncology

Year:

2000

Language:

english

File:

PDF, 92 KB

english, 2000

2

Elastic and inelastic scattering of 1 GeV protons on the 144, 150, 152Sm isotopes

J.P. Tabet, B. Bonin, A. Boudard, A. Chaumeaux, P. Couvert, J.L. Escudie, L. Farvacque, M. Garcon, D. Legrand, J.C. Lugol, B. Nefkens, J. Saudinos, Y. Terrien, Y. Abgrall, J. Labarsouque

Journal:

Nuclear Physics A

Year:

1982

Language:

english

File:

PDF, 800 KB

english, 1982

3

Effect of consumption of food cooked in aluminium or stainless-steel pots on Bangladeshi children with calcium-deficient rickets: an eight month trial

Jean-Paul Cimma, Josiane Arnaud, José Labarere, Olivier Guillard, Frédérique Nugues, Annie Marrauld, Chantal Durand, Jean-Marie Farvacque, Serge Pierre Bottari, Shahidul Haque

Journal:

Journal of Trace Elements in Medicine and Biology

Year:

2004

Language:

english

File:

PDF, 469 KB

english, 2004

4

Effects of a 105 hours psychological training program on attitudes, communication skills and occupational stress in oncology: a randomised study

Delvaux, N, Razavi, D, Marchal, S, Brédart, A, Farvacques, C, Slachmuylder, J-L

Journal:

British Journal of Cancer

Year:

2004

Language:

english

File:

PDF, 125 KB

english, 2004

5

Cancer care—A stress for health professionals

Nicole Delvaux, Darius Razavi, Christine Farvacques

Journal:

Social Science & Medicine

Year:

1988

Language:

english

File:

PDF, 1.20 MB

english, 1988

6

The effects of a 24-h psychological training program on attitudes, communication skills and occupational stress in oncology: a randomised study

Razavi, Darius, Delvaux, Nicole, Marchal, Serge, Bredart, Anne, Farvacques, Christine, Paesmans, Marianne

Journal:

European Journal of Cancer

Year:

1993

Language:

english

File:

PDF, 812 KB

english, 1993

7

Simple determination of ac conductivity for multicarrier systems

Farvacque, J. L., Vignaud, D.

Journal:

Physical Review B

Year:

1985

Language:

english

File:

PDF, 249 KB

english, 1985

8

Dynamical theory of transport phenomena in solids based on their electronic dielectric properties

Farvacque, J. L.

Journal:

Physical Review B

Year:

1989

Language:

english

File:

PDF, 310 KB

english, 1989

9

Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs

Farvacque, J.-L., Vignaud, D., Ferré, D., Depraetère, E.

Journal:

Materials Science Forum

Year:

1989

File:

PDF, 422 KB

1989

10

L’engagement dans le don de plasma : étude des déterminants chez des donneurs réguliers en plasmaphérèse

Delépine-Farvacques, S., Terrade, Florence, Danic, B., Lebaudy, J.-P.

Journal:

Transfusion Clinique et Biologique

Year:

2017

File:

PDF, 696 KB

2017

11

Development of the Multi-Dimensional Analysis of Patient Outcome Predictions during Medical Encounters

Ménard, Catherine, Libert, Yves, Canivet, Delphine, Van Achte, Laetitia, Farvacques, Christine, Liénard, Aurore, Merckaert, Isabelle, Reynaert, Christine, Slachmuylder, Jean-Louis, Durieux, Jean-Franç

Journal:

Patient Education and Counseling

Year:

2017

Language:

english

File:

PDF, 462 KB

english, 2017

12

Mobility Collapse in Undoped and Si-Doped GaN Grown by LP-MOVPE

Z. Bougrioua, J.-L. Farvacque, I. Moerman, P. Demeester, J.J. Harris, K. Lee, G. van Tendeloo, O. Lebedev, E.J. Thrush

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 221 KB

english, 1999

13

Numerical Determination of Shallow Electronic States Bound by Dislocations in Semiconductors

J.-L. Farvacque, P. François

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 174 KB

english, 2001

14

2DEG Mobility in AlGaN–GaN Structures Grown by LP-MOVPE

Z. Bougrioua, J.-L. Farvacque, I. Moerman, F. Carosella

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 86 KB

english, 2001

15

GaAs photoconductivity indicates native defect structure and metastability of Te complex

R. Masut, J.L. Farvacque, C.M. Penchina

Journal:

Solid State Communications

Year:

1982

Language:

english

File:

PDF, 469 KB

english, 1982

16

Different annealing behaviour of the metastable state in GaAs

D. Vignaud, J.L. Farvacque

Journal:

Solid State Communications

Year:

1986

Language:

english

File:

PDF, 221 KB

english, 1986

17

Observation of 1.13 eV polarized luminescence band in plastically deformed GaAs

E. Depraetere, D. Vignaud, J.L. Farvacque

Journal:

Solid State Communications

Year:

1987

Language:

english

File:

PDF, 256 KB

english, 1987

18

Strain fields due to differential dilatation at metal/semiconductor contacts and resulting piezoelectrical fields in GaAs

J.L. Farvacque, P. François

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 817 KB

english, 1993

19

Angular and energy dependence of the cross section and analyzing power of the reaction pp → dπ+ between 725 and 1000 MeV

B. Mayer, R. Bertini, J.M. Cameron, H. Catz, J.M. Durand, G.P. Gervino, C.M. Glashuasser, J.C. Lugol, C.A. Whitten, A.I. Yavin, J. Arvieux, S.D. Baker, L. Farvacque, D.A. Hutcheon, P. Catillon, G. Smi

Journal:

Nuclear Physics A

Year:

1985

Language:

english

File:

PDF, 767 KB

english, 1985

20

Alpha-nucleus elastic scattering at intermediate energies

B. Bonin, N. Alamanos, B. Berthier, G. Bruge, H. Faraggi, J.C. Lugol, W. Mittig, L. Papineau, A.I. Yavin, J. Arvieux, L. Farvacque, M. Buenerd, W. Bauhoff

Journal:

Nuclear Physics A

Year:

1985

Language:

english

File:

PDF, 1.44 MB

english, 1985

21

First step of degradation mechanisms in AlGaAs/GaAs laser-like structures

B. Sieber, J.L. Farvacque, J. Wang, J.W. Steeds

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 379 KB

english, 1993

22

Dislocations and quantum transport: a possible hint for one-dimensional conductivity along dislocation lines; a fundamental mechanism for the EBIC contrast formation

Z. Bougrioua, D. Ferré, J.L. Farvacque

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 438 KB

english, 1994

23

Material optimisation for AlGaN/GaN HFET applications

Z. Bougrioua, I. Moerman, N. Sharma, R.H. Wallis, J. Cheyns, K. Jacobs, E.J. Thrush, L. Considine, R. Beanland, J.-L. Farvacque, C. Humphreys

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 192 KB

english, 2001

24

Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0 0 0 1) sapphire

S Dassonneville, A Amokrane, B Sieber, J.-L Farvacque, B Beaumont, V Bousquet, P Gibart, K Leifer, J.-D Ganiere

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 251 KB

english, 1999

25

Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

J.-L Farvacque, Z Bougrioua, I Moerman, G Van Tendeloo, O Lebedev

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 305 KB

english, 1999

26

Numerical determination of one-dimensional energy bands bound to dislocations

J.L Farvacque, Ph François

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 186 KB

english, 1999

27

Ca doping of YBCO grain boundaries

A Berenov, C Farvacque, X Qi, J.L MacManus-Driscoll, D MacPhail, S Foltyn

Journal:

Physica C: Superconductivity

Year:

2002

Language:

english

File:

PDF, 103 KB

english, 2002

28

Theoretical aspects of the minority carrier recombination at dislocations in semiconductors

Jean-Louis Farvacque

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 1.27 MB

english, 1996

29

Dislocation etch pits on tellurium single crystals

J. C. Doukhan, J. L. Farvacque

Journal:

physica status solidi (a)

Year:

1971

Language:

english

File:

PDF, 305 KB

english, 1971

30

Low-temperature dislocation substructure in the early stage of deformation of tellurium single crystals

J. L. Farvacque, J. Crampon, J. C. Doukhan, B. Escaig

Journal:

physica status solidi (a)

Year:

1972

Language:

english

File:

PDF, 1.12 MB

english, 1972

31

The thermally activated deformation of tellurium single crystals

J. Crampon, J. C. Doukhan, B. Escaig, J. L. Farvacque

Journal:

physica status solidi (a)

Year:

1974

Language:

english

File:

PDF, 913 KB

english, 1974

32

Plastic deformation of selenium single crystals in a glide and X-ray observation of the induced substructure

J. L. Farvacque, J. C. Doukhan, B. Escaig, T. Tuomi

Journal:

physica status solidi (a)

Year:

1976

Language:

english

File:

PDF, 863 KB

english, 1976

33

The asymmetry and orientation dependence of c-slip in tellurium

J. L. Farvacque, J. C. Doukhan, B. Escaig

Journal:

physica status solidi (a)

Year:

1976

Language:

english

File:

PDF, 796 KB

english, 1976

34

Asymmetrical behaviour of “60°” dislocation glide in indium antimonide

D. Ferré, J. L. Farvacque

Journal:

physica status solidi (a)

Year:

1978

Language:

english

File:

PDF, 589 KB

english, 1978

35

Occurrence of an “” screw dislocation substructure in tellurium by a torsion experiment

J. P. Estienne, J. L. Farvacque

Journal:

physica status solidi (a)

Year:

1978

Language:

english

File:

PDF, 558 KB

english, 1978

36

On the measurement of thermally activated slip parameters in tetrahedrally coordinated semiconductors

B. Escaig, J. L. Farvacque, D. Ferré

Journal:

physica status solidi (a)

Year:

1982

Language:

english

File:

PDF, 383 KB

english, 1982

37

Cathodoluminescence evidence of the relative position of As(g) and Ga(g) dislocation-related energy bands in gallium arsenide

B. Sieber, J. L. Farvacque, A. Miri

Journal:

physica status solidi (a)

Year:

1993

Language:

english

File:

PDF, 412 KB

english, 1993

38

Connection between the Schoeck and the Haasen analysis of thermally activated dislocation glide in semiconductors

I. Zongo, J. L. Farvacque

Journal:

physica status solidi (a)

Year:

1994

Language:

english

File:

PDF, 315 KB

english, 1994

39

The Hole Mobility in a-Edge-Dislocated Tellurium Crystals

J. C. Doukhan, R. Drope, J. L. Farvacque, E. Gerlach, P. Geosse

Journal:

physica status solidi (b)

Year:

1974

Language:

english

File:

PDF, 724 KB

english, 1974

40

Scattering of free carriers due to the strain field of screw dislocations in semiconductors

J. L. Farvacque, E. Gerlach

Journal:

physica status solidi (b)

Year:

1976

Language:

english

File:

PDF, 294 KB

english, 1976

41

Screw-dislocation-induced scattering processes and acceptor states in Te

J. L. Farvacque, J. C. Douehan, U. von Alpen, E. Gmelin

Journal:

physica status solidi (b)

Year:

1977

Language:

english

File:

PDF, 681 KB

english, 1977

42

Inhomogeneous strain field scattering deformation potential. I. Theory

J. L. Farvacque, P. Lenglart

Journal:

physica status solidi (b)

Year:

1977

Language:

english

File:

PDF, 400 KB

english, 1977

43

Inhomogeneous Strain Field Scattering Deformation Potential. II. Free-Carrier Mobility Associated with Dislocation Strain Fields in Semiconductors

J. L. Farvacque, P. Lenglart

Journal:

physica status solidi (b)

Year:

1977

Language:

english

File:

PDF, 393 KB

english, 1977

44

Experimental evidence for piezoelectrical free-carrier scattering by screw dislocations in tellurium

J. P. Estienne, J. L. Farvacque

Journal:

physica status solidi (b)

Year:

1979

Language:

english

File:

PDF, 559 KB

english, 1979

45

Anisotropy of the Free Carrier Piezoelectric Scattering by Dislocations in III–V Compounds

D. Vignaud, J. L. Farvacque, D. Ferre

Journal:

physica status solidi (b)

Year:

1982

Language:

english

File:

PDF, 514 KB

english, 1982

46

Optical Absorption Studies of Plastically Deformed InSb

D. Vignaud, J. L. Farvacque

Journal:

physica status solidi (b)

Year:

1984

Language:

english

File:

PDF, 613 KB

english, 1984

47

Free-Carrier Optical Absorption Induced by Dislocation Scattering Mechanisms in III-V Compounds

D. Vignaud, J. L. Farvacque

Journal:

physica status solidi (b)

Year:

1984

Language:

english

File:

PDF, 568 KB

english, 1984

48

Improvement of debye-hückel evaluation of free carrier screening effects in semiconductors

J. L. Farvacque

Journal:

physica status solidi (b)

Year:

1986

Language:

english

File:

PDF, 394 KB

english, 1986

49

Free-Carrier Optical Absorption Induced by Dislocation Scattering Mechanisms in Semiconductors Application to GaAs

D. Vignaud, J. L. Farvacque

Journal:

physica status solidi (b)

Year:

1989

Language:

english

File:

PDF, 441 KB

english, 1989

50

Dislocation Bound States in Compound Semiconductors

J.-L. Farvacque, B. Pödör

Journal:

physica status solidi (b)

Year:

1991

Language:

english

File:

PDF, 556 KB

english, 1991

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